![]() ![]() ![]() The Emitter current is written as IE=IB + IC.The collector-base junction represented by CB is always reverse biased.The emitter-base junction is always forward biased.The current flow is not the result of majority charge carriers despite their quantity, the current flow is due to minority charge carriers in a bipolar junction transistor that is why they are also named as minority carrier devices.The PNP Bipolar junction Transistor has the majority of charge carriers as holes.The NPN Bipolar junction Transistor has the majority of charge carriers as electrons.The working principle of both the NPN and PNP transistor is almost the same, both of them differ in the conduction of current through charge carriers based on the majority and minority of charge carriers.Working Principle of a Bipolar Junction Transistor Symbols for different types of BJTs differ accordingly, do not confuse yourself when you see two or more slightly different ones!.The direction of flow of current is indicated by the direction of Arrowhead.Refer to the diagram given below showing the symbol of NPN and PNP Bipolar Junction Transistors All of the three components are represented in the symbol given below as B, E, and E.As the name indicates BJT is a bipolar device, which means it uses both the electrons and holes as charge carriers to perform its function.īipolar junction Transistor shortly known as BJT has the following three components. ![]() BJT by which we mean bipolar junction transistor is a current-controlled device, you will, later on, get to know how it works.Here are some of the peculiar features of bipolar junction transistors Until the last decades of the 19th century, bipolar junction transistors were manufactured individually as separate components and individual devices but later on, with the invention of integrated circuits, the world saw another electronic revolution.The invention of bipolar junction transistors revolutionized the world of electronics beyond imagination.And guess what? William Shockley, John Walter, and Bardeen were awarded with the Noble Prize for their achievements in 1956.After this not-so-recognized venture, William Shockley made a successful attempt of making a bipolar junction transistor by pressing together the wafers of semiconductor materials.Finally, in 1947 the efforts of john Walter and Bardeen a rough two-point contact device was made which was nowhere near to the modern of a bipolar junction transistor but it laid the foundation for the construction of a solid-state transistor when previously everything was vacuum!.So when scientists were done with controlling electrons inside a vacuum tube and its unruly behavior, they started devising other ways to run and control circuits.The vacuum tube triodes remained a hyped-up thing for almost half of a century, but they occupied large space and were less reliable in terms of usage, the other major drawback was the increase in complications related to current, voltage and whatnot just by increasing the number of vacuum triodes in the circuit. ![]()
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